Pallecchi, Emiliano
![Sudoc [ABES], France](/viaf/images/flags/SUDOC.png "Sudoc [ABES], France")
Emiliano Pallecchi researcher
VIAF ID: 95641111 (Personal)
Permalink: http://viaf.org/viaf/95641111
Preferred Forms
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Emiliano Pallecchi
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researcher
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100 1 _
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Pallecchi, Emiliano
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100 1 _
‡a
Pallecchi, Emiliano
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100 1 _
‡a
Pallecchi, Emiliano
4xx's: Alternate Name Forms (1)
Works
| Title | Sources |
|---|---|
| 2.5GHz integrated graphene RF power amplifier on SiC substrate |
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| Characterization of ferromagnetic contacts to carbon nanotubes |
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| Commutateurs RF fabriqués à partir de matériaux 2D. |
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| Contact resistance Study of “edge-contacted” metal-graphene interfaces |
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| Development of a stretchable microsystem for the study of electronic activity of neuronal cells under mechanical strain. |
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| Development of an ultralow current amplifier for scanning tunneling microscopy |
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| Développement de composants flexibles en technologie hétérogène (GaN et graphène) pour des applications hautes fréquences |
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| Développement d'un microsystème étirable pour l'étude de l'activité électrique de cellules neuronales sous contrainte mécanique |
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| Effect of oxygen adsorption on the local properties of epitaxial graphene on SiC |
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| Epitaxial graphene on step bunching of a 6H-SiC(0001) substrate: Aromatic ring pattern and Van Hove singularities |
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| Flower-shaped domains and wrinkles in trilayer epitaxial graphene on silicon carbide |
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| Graphène et matériaux 2D : techniques de transfert, fabrication d'hétérostructures et applications |
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| Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics |
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| Graphene field effect transistors with optimized contact resistance for current gain |
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| Graphene nanotransistors for RF charge detection |
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| Growth and transfer of graphene and hexagonal boron nitride by chemical vapor deposition : applications to thermally efficient flexible electronics |
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| High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen |
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| High frequency and noise performance of GFETs |
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| High frequency characterization and compact electrical modelling of Graphene Field Effect Transistors |
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| Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz |
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| Insulating to relativistic quantum Hall transition in disordered graphene |
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| Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates |
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| Multiwall carbon nanotube Josephson junctions with niobium contacts |
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| Physical and electrical characterization of CVD graphene devices : towards large scale and flexible graphene electronics |
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| Procédés technologiques pour l’électronique flexible à base de graphène. |
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| RF switches based on 2D materials |
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| Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures |
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| Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances |
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| Study of graphene-based high frequency optoelectronic devices for optoelectronic mixing. |
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| Supercollision cooling in undoped graphene |
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| A thermal diode and novel implementation in a phase-change material |
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| Thermal shot noise in top-gated single carbon nanotube field effect transistors |
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| Transport scattering time probed through rf admittance of a graphene capacitor |
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