Sitar, Zlatko
Zlatko Sitar physicien slovène
Sitar, Zlatko, 19..-....
VIAF ID: 77154440095635341233 (Personal)
Permalink: http://viaf.org/viaf/77154440095635341233
Preferred Forms
- 100 1 _ ‡a Sitar, Zlatko
- 100 1 _ ‡a Sitar, Zlatko, ‡d 19..-....
- 100 0 _ ‡a Zlatko Sitar ‡c physicien slovène
4xx's: Alternate Name Forms (8)
Works
Title | Sources |
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4'-nitrobenzylidene-3-acetamino-4-methoxy-aniline on ethylenediammonium terephthalate single crystals | |
Control of diamond heteroepitaxy on nickl by optical reflectance | |
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide | |
Cubic boron nitride thin film synthesys by microwave ECR plasma chemical vapor deposition | |
Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment | |
Diamond 2002 : 13th European conference on Diamond, diamond-like materials, carbon nanotubes, nitrides & silicon carbide, Granada, Spain, 8-13 September, 2002 : abstract book | |
Effect of nitrogen incorporation on electron emission from chemical vapour deposited diamond | |
Electrical characterization of diamond and graphite coated Mo field emitters | |
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy | |
Electron emission mechanism from c-BN coated No emitters | |
Ellipsometric characterization of optically anisotropic AlN thin films with rough surfaces | |
Energy distrubution of field emitted electrons from carbon nanotubes | |
Field emission energy distribution analysis of cubic-Bn-coated Mo emitters : nonlinery behaviour | |
Frekvenčno podvajanje svetlobe v periodično moduliranih Al[sub]xGa[sub](1-x)N tankih filmih | |
Growth of AIN/GaN layered structures by gas source molecular beam epitaxy | |
Hot electron transport in AlN | |
The influences of reactant composition and substrate material on the combustion synthesis of diamond | |
Issues and examples regarding qrowth of AlN, GaN and AlGaN thin films via OMVPE and gas source MBE | |
Luminescence and lattice parameter of cubic gallium nitride | |
Molecular beam epitaxy for the growth of ferroelectronic thin films | |
Morphology and interface chemistry of the initial growth of GaN and AlN on a-SiC and sapphire | |
Naprava za merjenje porazdelitve gostote svetlobnega toka v laserskem snopu : tehnična izboljšava | |
Optical characterization of AlGaN waveguides for quasi phase-matched nonlinear optics | |
Optical metastability in bulk GaN single crystals | |
Optical properties of aluminum nitride single crystals in the THz region | |
Optika in laserska spektroskopija | |
Periodically poled Al[sub]xGa[sub](1-x)N thin films for integrated optics | |
Photoluminiscence - from mecanically milled Si and SiO[sub]2 powders | |
Ramanski laser na metan | |
Rast III-nitridov s sublimacijo in metalorgansko parno fazno epitaksijo | |
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition | |
Spintzenforschung im Verbund Hochschule-Industrie : Mikrosensorik und Telekomunikation | |
Structural and electronic properties of boron nitride thin films containing silicon | |
Sublimation growth and characterization of bulk AlN crystals | |
Surface melting in the heteroepitaxial nucleation of diamond on Ni | |
Textures diamond growth by low pressure flat flame chemical vapor deposition | |
Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates | |
Ultraviolet second harmonic generation in AlN waveguides with modal phase matching | |
Vrednotenje dielektričnih materialov na merilnih konicah. |