Fimland, Bjørn-Ove
Bjørn-Ove Fimland fisiko noruega
VIAF ID: 313149106171368491331 ( Personal )
Permalink: http://viaf.org/viaf/313149106171368491331
Preferred Forms
- 100 0 _ ‡a Bjørn-Ove Fimland ‡c fisiko noruega
- 100 1 _ ‡a Fimland, Bjørn-Ove
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4xx's: Alternate Name Forms (7)
Works
Title | Sources |
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Adsorbate-induced modification of the surface electric field of GaAs (001)-c(4 x 4) measured via the linear electro-optic effect | |
Adsorption configurations of hydrocarbon ring molecules onGaAs(001)-c(4 x 4) | |
Adsorption of cyclopentene on GaAs(001) and InP(001) : a comparative study by synchrotron-based core level spectroscopy | |
Adsorption of [(tBu)GaS]₄ on GaAs(110)-(2x4) | |
AlGaAs microelectronic device processing using an As capping layer | |
Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers | |
Anomalous ultrasonic attenuation in ammonium aluminum alum | |
As capping of MBE-grown compound semiconductors : novel opportunities to interface science and device fabrication | |
Calibration of the arsenic mole fraction in MBE grown GaAsySb₁⁻y and AlxGa₁⁻xAsySb₁⁻y (y<0.2) | |
Capping and decapping of MBE-grown GaAs(001) investigated with ASP, XPS, LEED, and RHEED | |
Critical thickness of MBE-grown Ga₁-xInxSb (x<0.2) on GaSb | |
Dark field transmission electron microscopy techniques forstructural characterization of semiconductor nanowire heterostructures | |
Deactivation of Be acceptors by atomic hydrogen in AlGaAs/GaAs quantum well structures | |
Dielectric response induced by intersubband transitions in quantum wells : transmission ellipsometry studies at Brewster angle | |
Dielektriske studier av ammoniumsalter | |
The Effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution X-ray diffraction and photoluminescence | |
The effect of In segregation on the PLE spectra of Inx-Ga₁₋xAs/GaAs multiple quantum wells | |
Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa₁-xAs | |
The Electrodeposition of copper onto UHV-prepared GaAs(001) surfaces | |
Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control | |
Epitaxial CoGa and textured CoAs contacts on Ga₁-xAlxAs fabricated by molecular-beam epitaxy | |
Growth of heterostructured III-V nanowires by molecular beam epitaxy for photonic applications | |
High aspect ratio etching of GaSb/AlGaAsSb for photonic crystals | |
Influence of hydrogen adsorption on the optical properties of the GaAs(100)-c(4x4) surface | |
Interface chemical structure of Ti/AlxGa₁₋xAs(001) | |
Micro-photoluminescence study of single GaAsSb/GaAs radial and axial heterostructured core-shell nanowires | |
Microscopic structure of the GaAs(001)-(6x6) surface derived from scanning tunneling microscopy | |
Modulation elllipsometry measurements and density matrix modeling of a p-i-n-i superlattice optoelectronic modulator | |
Molecular beam epitaxy of InP-based alloys for long-wavelength vertical cavity lasers | |
Nitrate motion and dielectric losses in nickel hexammine nitrate | |
NMR and dielectric studies of NH4+ motion in some ammonium alums | |
Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires | |
Optical anisotropy of cyclopentene terminated GaAs(001) surfaces | |
Optical properties of single wurtzite GaAs nanowires and GaAs nanowires with GaAsSb inserts | |
Optical resonances of indium islands on GaAs(001) observed by reflectance anisotropy spectroscopy | |
Optical studies of excitons in Be-doped GaAs/AlGaAs symmetric coupled double quantum wells | |
Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy | |
Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte : an in situ X-ray scattering study | |
Proton NMR one-phonon and two-phonon relaxation due to tunnelling in ammonium hexachlorides | |
Proton relaxation and piezoelectricity in perchlorates / I. Svare and B. O. Fimland | |
Reflectance anisotropy of GaAs(100) : theory and experiment | |
Reorientations in [Mg(H2O)6](ClO4)2 studied with proton magnetic resonance and quasielastic neutron scattering | |
Schottky barrier formation at Au/MBE-grown GaAs(001) interfaces | |
Selective area epitaxy of n-GaAs with clean growth-interrupted interfaces using arsenic passivation | |
Semiconductor quantum-wires and nano-wires for optoelectronic applications | |
Structural analysis of the indium-stabilized GaAs(001)-c(8x2) surface | |
Structure of metal-rich (001) surfaces of III-V compound semiconductors | |
Surface ordering on GaAs(100) by indium-termination | |
Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer | |
Surfactant-mediated growth of indium on GaAs(001) | |
Thermal expansion of GaSb measured by temperature dependent x-ray diffraction | |
Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy |