Salem, Bassem, 1976-....
Bassem Salem researcher
VIAF ID: 210142792 (Personal)
Permalink: http://viaf.org/viaf/210142792
Preferred Forms
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100 0 _ ‡a Bassem Salem ‡c researcher
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100 1 _ ‡a Salem, Bassem ‡d 1976-...
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100 1 _ ‡a Salem, Bassem, ‡d 1976-....
4xx's: Alternate Name Forms (1)
Works
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O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate |
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Composition and Size Effects on the Optical Properties of Isolated Silicon-Germanium Nanowires |
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Contribution à l'étude des propriétés structurales et ferroélectriques des couches minces HZO |
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Contribution to the study of structural and ferroelectric properties of HZO thin films. |
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Control of the interfacial abruptness of Au-catalyzed Si-Si1−xGex heterostructured nanowires grown by vapor–liquid–solid |
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Croissance de l'alliage AlGaN en configurations planaire et nanopyramidale pour la réalisation de LEDs UV-C efficaces |
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Croissance par MOCVD et propriétés de boîtes quantiques InAs/GaAs épitaxiées sur silicium |
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Density of states, band offset and charge injection in one-dimensional semiconductor nanostructures studied with multiple probes scanning tunneling microscopy |
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Design and fabrication of a normally-off vertical power transistor based on GaN nanowires. |
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Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate. |
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Effect of HCl on the doping and shape control of silicon nanowires |
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Elaboration and integration of GeSn nanowires for the realisation of low power nanoelectronic devices.. |
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Elaboration et intégration de nanofils GeSn pour la réalisation de dispositifs nanoélectroniques basse consommation |
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Elaboration of Ge1-xSnx semiconductor thin films and their ohmic contacts. |
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Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique |
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Étude et optimisation de capteurs d'oxyde d'azote (NO2) à base de couches sensibles de dioxyde d'étain (SnO2) pour des applications aux mesures de la qualité de l'air |
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Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications |
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Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires |
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Growth by MOCVD and properties of InAs |
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Growth of the AlGaN alloy in planar and nanopyramid configuration for the realization of efficient UV-C LEDs. |
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Impact of the droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires |
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An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires |
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InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates |
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Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots |
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InP-HEMT pour les applications THz. |
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Intégration 3D des transistors à nanofils de silicium-germanium sur puces CMOS |
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Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots |
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Matériaux et Dispositifs optoélectroniques pour la génération et la détection de signaux THz impulsionnels par photocommutation à 1,55µm |
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Optimization of dielectric/GaN interface for MIS gate power devices. |
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Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection |
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Optoelectronic devices for THz emission and detection by 1,55µm femtosecond laser photoswitch. |
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Passivation of III-N materials of the GaN type. |
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Patterned growth of high aspect ratio silicon wire arrays at moderate temperature |
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Silicon nanonet, a promising percolative material for flexible and large scale electroncs. |
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Spectroscopie optique des îlots quantiques d'InAs/InP (001) pour la réalisation de composants optoélectroniques émettant à 1.55 µm Optical spectroscopy of InAs/InP(001) nanostructures for the realization of optoelectronics devices emitting at 1.55 micrometers |
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Study and optimization of nitrogen oxide (NO2) sensors based on tin dioxide thin films for air quality measurement applications. |
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Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon |
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Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method |
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Synthèse chimique et intégration de nanofils de ZnO pour le développement de nanogénérateurs piézoélectriques |
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Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. |
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Tunable enhancement of light absorption and scattering in Si1−xGexnanowires |
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Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means |
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