Damilano, Benjamin
B Damilano
VIAF ID: 194918049 (Personal)
Permalink: http://viaf.org/viaf/194918049
Preferred Forms
-
100 0 _ ‡a B Damilano
-
100 1 _ ‡a Damilano, Benjamin
4xx's: Alternate Name Forms (2)
Works
Title | Sources |
---|---|
1.5 µm luminescence from InAs/GaxIn1–xNyAs1–y quantum dots grown on GaAs substrate |
![]() |
Analyse de la structure locale et propriétés optiques de semiconducteurs nitrures pour le développement des diodes électroluminescentes efficaces au-delà du vert. |
![]() |
Analysis of the local structure and optical properties of nitrides semiconductors for LEDs beyond the green wavelength range. |
![]() |
Blue Microlasers Integrated on a Photonic Platform on Silicon |
![]() |
Built-in electric field and radiative efficiency of polar |
![]() |
Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure |
![]() |
Developments of devices based on III-V nanowires for photovoltaics. |
![]() |
Développement des dispositifs à base des nanofils III-V pour le photovoltaïque |
![]() |
Elaboration and properties of InGaN-based nanowires for the realization of micro- and nanoLEDs. |
![]() |
Energy efficiency evaluation of GaN-based microwires for the fabrication of micro-LEDs displays. |
![]() |
Epitaxie sélective en phase vapeur aux organométalliques pour la modulation de la longueur d'onde de multipuits quantiques InGaN/GaN |
![]() |
Étude du rendement énergétique de micro-fils à base de GaN pour la réalisation d'écrans micro-LEDs |
![]() |
Étude théorique de la faisabilité des LED à base de ZnGeN2 |
![]() |
Excitons in nitride heterostructures: From zero- to one-dimensional behavior |
![]() |
Fils Core-shell InGaN |
![]() |
Growth and characterization of GaN/lnGaN nanowire heterostructures |
![]() |
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes |
![]() |
HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application. |
![]() |
III-nitride on silicon electrically injected microrings for nanophotonic circuits |
![]() |
III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet |
![]() |
In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes |
![]() |
InGaN islands and thin films grown on epitaxial graphene |
![]() |
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm |
![]() |
Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots |
![]() |
Long wavelength emitting InAs∕Ga0.85In0.15NxAs1−x quantum dots on GaAs substrate |
![]() |
MOVPE selective area growth for wavelength modulation of InGaN/GaN multi-quantum wells. |
![]() |
Nanostructured III-nitride light emitting diodes |
![]() |
Nanostructures (Ga, In, AI)N : croissance par épitaxie sous jets moléculaires, propriétés optiques, applications aux diodes électroluminescentes |
![]() |
Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5 µm |
![]() |
Optimization of the internal quantum efficiency of luminescent devices based on GaN and operating from the yellow to the red |
![]() |
Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots |
![]() |
Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy |
![]() |
Propriétés optiques et structurales de dispositifs luminescents contenant des puits quantiques (In,Ga)N à forte concentration en Indium et émettant dans le vert et le jaune |
![]() |
Radiative lifetime of a single electron-hole pair inGaN∕AlNquantum dots |
![]() |
Réalisation de pseudo-substrat lll-N relaxé par porosification électrochimique pour applications LED rouge |
![]() |
Red LEDs based on graphene (2D crystals)/InGaN heterostructures. |
![]() |
Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication |
![]() |
Spectroscopy of the electron states in self-organized GaN/AlN quantum dots |
![]() |
Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones |
![]() |
Structural and optical characterization of green-yellow light emitting devices with high indium concentrated (In,Ga)N quantum wells. |
![]() |
Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties |
![]() |
Theoretical study and feasibility of ZnGeN2-based LED. |
![]() |
Tunnel junctions in nitride heterostructures for optoelectronic applications. |
![]() |