Gerhard Klimeck
Klimeck, Gerhard.
![Sudoc [ABES], France](/viaf/images/flags/SUDOC.png "Sudoc [ABES], France")
Klimeck, Gerhard 1966-
VIAF ID: 122131994 (Personal)
Permalink: http://viaf.org/viaf/122131994
Preferred Forms
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100 0 _
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Gerhard Klimeck
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100 1 _ ‡a Klimeck, Gerhard
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100 1 _ ‡a Klimeck, Gerhard
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100 1 _
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Klimeck, Gerhard
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100 1 _
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Klimeck, Gerhard
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100 1 _
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Klimeck, Gerhard
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100 1 _
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Klimeck, Gerhard
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1966-
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100 1 _ ‡a Klimeck, Gerhard.
4xx's: Alternate Name Forms (9)
5xx's: Related Names (1)
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Essen
Works
| Title | Sources |
|---|---|
| Computational electronics : semiclassical and quantum device modeling and simulation |
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| Nanoelectronic 3-D |
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| nanoHUB.org: A Gateway to Undergraduate Simulation-Based Research in Materials Science and Related Fields |
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| nanoHUB.org: Advancing Education and Research in Nanotechnology |
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| nanoHUB.org: cloud-based services for nanoscale modeling, simulation, and education |
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| nanoHUB.org serving over 120,000 users worldwide: It's first cyber-environment assessment |
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| NanoHUB.org - the ABACUS tool suite as a framework for semiconductor education courses |
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| nanoHUB-U: A science gateway ventures into structured online education |
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| NEMO5: Predicting MoS 2 heterojunctions |
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| NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes |
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| Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects |
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| Non-equilibrium Green's functions method: Non-trivial and disordered leads |
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| Non-primitive rectangular cells for tight-binding electronic structure calculations |
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| Noninvasive spatial metrology of single-atom devices. |
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| Novel III-N heterostructure devices for low-power logic and more |
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| Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators |
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| Numerical strategies towards peta-scale simulations of nanoelectronics devices |
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| Observation of 1D behavior in Si nanowires: toward high-performance TFETs |
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| Off-zone-center or indirect band-gap-like hole transport in heterostructures |
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| Ohm's law survives to the atomic scale |
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| OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices |
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| On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias |
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| On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors |
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| On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs |
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| Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors |
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| Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots |
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| Orbital Stark effect and quantum confinement transition of donors in silicon |
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| P-Type Tunnel FETs With Triple Heterojunctions |
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| Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. |
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| Performance analysis of ultra-scaled InAs HEMTs |
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| Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm) |
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| Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures |
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| Performance degradation of superlattice MOSFETs due to scattering in the contacts |
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| Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering |
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| Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness |
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| Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs |
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| Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations |
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| Physical oxide thickness extraction and verification using quantum mechanical simulation |
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| Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors |
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| Practical application of zone-folding concepts in tight-binding calculations |
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| Practical Considerations in Cloud Utilization for the Science Gateway nanoHUB.org |
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| Probing scattering mechanisms with symmetric quantum cascade lasers |
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| Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs |
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| Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures |
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| Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)] |
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| Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)] |
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| Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations |
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| Quantum approach to electronic noise calculations in the presence of electron-phonon interactions |
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| Quantum cascade laser simulation using an sp/sup 3/s* full Brillouin zone tight-binding model |
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| Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots |
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| Quantum corrected drift-diffusion simulation for prediction of CMOS scaling |
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| Quantum dot lab: an online platform for quantum dot simulations |
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| Quantum kinetic analysis of mesoscopic systems: Linear response |
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| Quantum simulation of the Hubbard model with dopant atoms in silicon |
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| QUANTUM SIMULATIONS OF DUAL GATE MOSFET DEVICES: BUILDING AND DEPLOYING COMMUNITY NANOTECHNOLOGY SOFTWARE TOOLS ON NANOHUB.ORG |
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| Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction |
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| Quantum transport in NEMO5: Algorithm improvements and high performance implementation |
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| Quantum transport in ultra-scaled phosphorous-doped silicon nanowires |
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| Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method |
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| Quantum transport with spin dephasing: A nonequlibrium Green’s function approach |
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| Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes. |
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| Research in computing-intensive simulations for nature-oriented civil-engineering and related scientific fields, using machine learning and big data: an overview of open problems |
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| Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO) |
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| Resonant-tunneling diodes with emitter prewells |
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| Resonant tunneling in disordered materials such as SiO/sub 2//Si/SiO/sub 2 |
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| Resonant tunneling through quantum-dot arrays |
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| Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations |
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| Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study |
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| Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes |
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| Rough interfaces in THz quantum cascade lasers |
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| Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass |
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| Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness |
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| Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts |
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| Scaling Theory of Electrically Doped 2D Transistors |
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| Scattering in Si-nanowires — Where does it matter? |
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| Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets |
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| Sensitivity Challenge of Steep Transistors |
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| Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires |
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