Gossard, A. C.
Gossard, Arthur C.
Gossard, Arthur C. 1935-2022
Arthur Gossard American scientist
VIAF ID: 12146522473132392498 ( Personal )
Permalink: http://viaf.org/viaf/12146522473132392498
Preferred Forms
- 100 0 _ ‡a Arthur Gossard ‡c American scientist
- 200 _ | ‡a Gossard ‡b Arthur C.
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- 100 1 _ ‡a Gossard, A. C.
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- 100 1 0 ‡a Gossard, A. C.
- 100 1 _ ‡a Gossard, Arthur C.
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- 100 1 _ ‡a Gossard, Arthur C.
- 100 1 _ ‡a Gossard, Arthur C. ‡d 1935-2022
4xx's: Alternate Name Forms (18)
5xx's: Related Names (4)
- 551 _ _ ‡a Ottawa, Ill. ‡4 ortg ‡4 https://d-nb.info/standards/elementset/gnd#placeOfBirth
- 551 _ _ ‡a Santa Barbara, Calif. ‡4 orts ‡4 https://d-nb.info/standards/elementset/gnd#placeOfDeath
- 551 _ _ ‡a Santa Barbara, Calif. ‡4 ortw ‡4 https://d-nb.info/standards/elementset/gnd#placeOfActivity
- 510 2 _ ‡a University of California ‡4 affi ‡4 https://d-nb.info/standards/elementset/gnd#affiliation ‡e Affiliation
Works
Title | Sources |
---|---|
Advanced epitaxy for future electronics ... c2000: | |
Epitaxial microstructures | |
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors | |
III-V heterostructures for electronic/photonic devices, c1989: | |
International System of Units (SI) Traceable Noise-Equivalent Power and Responsivity Characterization of Continuous Wave ErAs:InGaAs Photoconductive Terahertz Detectors | |
Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation | |
Performance of a 1030 nm driven ErAs:InGaAs photoconductive receiver at high THz average power | |
Semiconductors and semimetals. |