B Murdin
Murdin, B.N.
Murdin, Ben, 19..-....
VIAF ID: 54064761 (Personal)
Permalink: http://viaf.org/viaf/54064761
Preferred Forms
- 100 0 _ ‡a B Murdin
- 100 1 0 ‡a Murdin, B. N.
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- 100 1 _ ‡a Murdin, B. N. (sparse)
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- 100 1 _ ‡a Murdin, B.N.
- 100 1 _ ‡a Murdin, Ben, ‡d 19..-....
4xx's: Alternate Name Forms (3)
Works
Title | Sources |
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Corrigendum: Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out | |
Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies | |
Determination of Landau level lifetimes in AlGaAs/GaAs heterostructures with a ps free electron laser | |
Dilute antimonide nitrides for very long wavelength infrared applications | |
Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors | |
Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments | |
Direct evidence for the role of streaming motion in the hot-hole p-Ge laser | |
Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells | |
Direct observation of the LO phonon bottleneck in wide GaAs/AlxGa1−xAs quantum wells | |
The effect of pressure on the radiative efficiency of InAs based light emitting diodes | |
Electron cooling times in PbTe Landau quantized wires and dots | |
Electron spin coherence in long wavelength Hg/sub 1-x/Cd/sub x/Te | |
Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb | |
Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon | |
Erratum: Zero-field spin splitting and spin lifetime in n - InSb ∕ In 1 − x Al x Sb asymmetric quantum well heterostructures [Phys. Rev. B 77 , 165335 (2008)] | |
Excite-probe FEL | |
Excitonic signatures in the photoluminescence and terahertz absorption of aGaAs∕AlxGa1−xAsmultiple quantum well | |
Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures. | |
Far-infrared picosecond time-resolved measurement of the free-induction decay in GaAs:Si | |
Far‐infrared pump‐probe measurements of the intersubband lifetime in an AlGaAs/GaAs coupled‐quantum well | |
Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures | |
Gain recovery dynamics of a terahertz quantum cascade laser | |
Giant multiphoton absorption for THz resonances in silicon hydrogenic donors | |
Giant non-linear susceptibility of hydrogenic donors in silicon and germanium | |
Growth of dilute GaNSb by plasma-assisted MBE | |
High-field impurity magneto-optics of Si:Se | |
High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm | |
High pressure studies of mid-infrared type-II “W” diode lasers at cryogenic temperatures | |
Highly efficient THz four-wave mixing in doped silicon | |
Identification of V Se ‐impurity pairs in ZnSe:N | |
Infrared free-electron laser measurement of power limiting by two-photon absorption in InSb | |
InSb1−xNx growth and devices | |
Interband magneto-optics of InAs 1-x Sb x | |
Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness | |
Isotope effect on the lifetime of the 2 p 0 state in phosphorus-doped silicon | |
Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon | |
The multi-photon induced Fano effect | |
Nano-orbitronics in silicon | |
Narrow gap semiconductors 2007 : proceedings of the 13th international conference, 8-12 July, 2007, Guildford, UK | |
A new Fourier transform photo-modulation spectroscopic technique for narrow band-gap materials in the mid- to far-infra-red | |
Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications. | |
Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots | |
Optically detected magnetic resonance of deep centers in molecular beam epitaxy ZnSe:N | |
LO phonon scattering as a depopulation mechanism in Si/SiGe quantum cascades | |
Photoassisted ionization spectroscopy of few implanted bismuth orbitals in a silicon-on-insulator device | |
Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys | |
Photon assisted tunneling in pairs of silicon donors | |
Picosecond dynamics of a silicon donor based terahertz detector device | |
Preface: phys. stat. sol. (b) 235/2 | |
The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P | |
Quantitative analysis of electrically detected Ramsey fringes in P-doped Si | |
Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures | |
Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm | |
Resonant circular photogalvanic effect in GaN/AlGaN heterojunctions | |
Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars | |
Silicon as a model ion trap: Time domain measurements of donor Rydberg states. | |
Spectroscopy of GaAs∕AlGaAs quantum-cascade lasers using hydrostatic pressure | |
Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers | |
Spin echo from erbium implanted silicon | |
Spin lifetime in high quality InSb epitaxial layers grown on GaAs | |
Spin preservation during THz orbital pumping of shallow donors in silicon | |
Spin relaxation by transient monopolar and bipolar optical orientation | |
Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering | |
Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs | |
Suppression of Auger recombination in long-wavelength quantum well W-structure lasers | |
Suppression of D’yakonov–Perel spin relaxation in InAs and InSb by n -type doping at 300 K | |
Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors, 1997: | |
Temperature dependence of the electron spingfactor in GaAs | |
Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon | |
Time resolved studies of intersubband relaxation in GaAs/AlGaAs quantum wells below the optical phonon energy using a free electron laser | |
Toward Silicon-Based Lasers for Terahertz Sources | |
Tunable cyclotron resonance-laser in p-Ge |