Klaus Ploog deutscher Hochschullehrer, Physiker und Chemiker
Ploog, Klaus, 1941-....
Ploog, Klaus
Ploog, Klaus H.
VIAF ID: 64094349 (Personal)
Permalink: http://viaf.org/viaf/64094349
Preferred Forms
- 100 0 _ ‡a Klaus Ploog ‡c deutscher Hochschullehrer, Physiker und Chemiker
- 200 _ | ‡a Ploog ‡b Klaus ‡f 1941-....
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- 100 1 _ ‡a Ploog, Klaus
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- 100 1 _ ‡a Ploog, Klaus ‡d 1941-
- 100 1 _ ‡a Ploog, Klaus ‡d 1941-
- 100 1 _ ‡a Ploog, Klaus, ‡d 1941-....
4xx's: Alternate Name Forms (12)
5xx's: Related Names (2)
Works
Title | Sources |
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Compound semiconductors 1999 : proceedings of the Twenty-Sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999 | |
Determination of the lateral periodicity of nanometer quantum dot arrays by triple crystal diffractometry | |
Difference frequency Raman scattering and confined optical phonons in ultrashort-period | |
Dynamic coalescence kinetics of facetted 2D islands | |
Ellipsometric and reflectance studies of GaAs/AlAs superlattices | |
Endotaxy of MnSb into GaSb | |
Excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond coherent spectroscopy. | |
Experimental and theoretical study of scattering mechanisms for 2D excitons in GaAs/AlGaAs quantum wells | |
Focused‐ion‐beam defined and overgrown collector‐up AlGaAs/GaAs heterojunction bipolar transistors | |
Hot-electron magnetophonon resonances in doped and undoped GaAs/(Ga,Al)As quantum wells studied using photoluminescence | |
Investigation of InAs submonolayer and monolayer structures on GaAs | |
Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering | |
Kohlenstoff-induzierte gitter beim bor: I-tetragonales (B12)4B2C und (B12)4B2C2 | |
Lateral periodicity of elastic domains in MnAs/GaAs(001) epitaxial layers studied by high resolution X-ray diffraction | |
Lateral spreading of focused ion‐beam‐induced damage | |
Layer-by-layer growth of GaAs | |
Low‐temperature transport characteristics of AlGaAs‐GaAs in‐plane‐gated wires | |
Luminescence experiments on acceptor δ-doped GaAs-AlGaAs single heterojunctions with optically tunable electron concentration | |
Magneto-optical studies of the energy spectrum of confined electrons in isolated one-dimensional channels | |
Magneto-photoluminescence excitation spectroscopy in a centre Si delta -doped GaAs/Al0.33Ga0.67As double heterostructure | |
Many-body effects in type-II quantum-well and quantum-well-wire superlattices | |
MBE growth and characterisation of AlxGa1−xSb layers on GaSb substrates | |
Modification of Fano resonances by resonant polaron coupling in bulk GaAs | |
Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells | |
Molecular beam epitaxy 1992 : proceedings of the Seventh International Conference on Molecular Beam Epitaxy, Schwäbisch Gmünd, Germany, 24-28 August 1992 | |
Molecular beam epitaxy and heterostructures | |
Molecular beam epitaxy of III-V compounds : a comprehensive bibliography, 1958-1983 | |
Molekulârno-lučevaâ èpitaksiâ i geterostruktury | |
Near-field spectroscopy of single semiconductor nanostructures | |
Non-Ostwald coarsening of the GaAs(001) surface | |
Nonequilibrium cooling of thermalized electrons and holes in GaAs/ Al x Ga 1 − x As quantum wells | |
Nonequilibrium luminescence at theE0+Δ0gap in GaAs with Si‐δ doping | |
Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(001) | |
Optical characterization of AlAs/GaInAs multiple quantum wells | |
Optical properties of AlAs | |
Optical spectroscopy in the fractional quantum hall effect and wigner solid regimes | |
Papers presented at the 4th International symposium on blue lasers and light emitting diodes (ISBLLED 2002) : Córdoba, Spain, march 11-15, 2002 | |
Physica status solidi. | |
Physics and technology of semiconductor quantum devices : proceedings of the international school held in Mesagne (Brindisi), Italy, 21-26 September 1992 | |
Picosecond step-function response of in-plane gate transistor | |
POSITION AND CHARACTER (Ɖ OR X) OF ENERGY STATES IN SHORT-PERIOD (GaAs)m(AlAs)n SUPERLATTICES | |
Praseodymium silicide formation at the Pr2O3/Si interface | |
Quantum mechanical repulsion of exciton levels in a disordered quantum well evidenced by near-field spectroscopy | |
Quasi-one-dimensional ballistic electron transport in in-plane-gated channels at liquid nitrogen temperature | |
Recovery kinetics of the GaAs | |
Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001) | |
Response to ‘‘Comment on ‘Proposal of novel electron wave coupled devices’ ’’ | |
Room‐temperature stimulated emission of optically pumped GaAs/AlAs quantum wires grown on (311)A‐oriented substrates | |
Semiconductor quantum well structures and superlattices : May 13th-15th 1985, Strasbourg (France) | |
Strained InAs/AlxGa0.48 − xIn0.52As heterostructures: a tunable quantum well materials system for light emission from the near-IR to the mid-IR | |
Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE | |
Structural properties of MnAs epitaxial films on GaAs: an in situ x-ray study | |
Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface X-ray diffraction | |
Synchrotron x-ray scattering study of thin epitaxial Pr2O3 films on Si(001) | |
Temperature dependence of the dielectric function and interband critical points of AlAs obtained on an MBE grown layer | |
Temperature dependence of the luminescence from a two-dimensional electron system in the Wigner solid regime | |
Three-five quantum system research | |
Time‐resolved investigations of excitonic recombination in highly strained InAs/Al0.48In0.52As quantum wells | |
Tunable in-plane-gated (IPG) quantum wire structures fabricated with directly written focused ion beams | |
Tunneling time of electrons in modulation n- doped GaAlAsGaAsAlAs quantum wells | |
Ultrafast near-field spectroscopy of quasi-one-dimensional transport in a single quantum wire | |
Velocity modulation in focused‐ion‐beam written in‐plane‐gate transistors |