Pantelides, Sokrates T.
Pantelides, Sokrates T., 1948-....
Σωκράτης Παντελίδης
Pantelides, Sokrates ca. 20./21. Jh.
Pantelides, S. T. Sokrates T.
VIAF ID: 71960638 (Personal)
Permalink: http://viaf.org/viaf/71960638
Preferred Forms
-
-
- 100 1 0 ‡a Pantelides, Sokrates T.
- 100 1 _ ‡a Pantelides, Sokrates T.
-
-
-
-
-
-
- 100 1 _ ‡a Pantelides, Sokrates T. ‡d 1948-
- 100 1 _ ‡a Pantelides, Sokrates T., ‡d 1948-....
- 100 1 _ ‡a Pantelides, Sokrates ‡d ca. 20./21. Jh.
- 100 0 _ ‡a Σωκράτης Παντελίδης
4xx's: Alternate Name Forms (9)
5xx's: Related Names (1)
Works
Title | Sources |
---|---|
Atomic-scale determination of spontaneous magnetic reversal in oxide heterostructures | |
Atomically precise, custom-design origami graphene nanostructures | |
Computer-based microscopic description of the structure and properties of materials, c1986: | |
Deep centers in semiconductors : a state of the art approach | |
Defects in microelectronic materials and devices | |
Direct Visualization of Hydrogen-Transfer Intermediate States by Scanning Tunneling Microscopy | |
Dislocation-driven growth of two-dimensional lateral quantum-well superlattices. | |
The effect of intrinsic crumpling on the mechanics of free-standing graphene | |
Fast kinetics of magnesium monochloride cations in interlayer-expanded titanium disulfide for magnesium rechargeable batteries. | |
Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers | |
Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication | |
Integration of graphene and two-dimensional ferroelectrics: properties and related functional devices | |
Interface dipole between two metallic oxides caused by localized oxygen vacancies | |
Interface-induced multiferroism by design in complex oxide superlattices. | |
Internat'l Topical Conf. on the Physics of MOS Insulators, N.C. St.U., 1980. | |
Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters. | |
Locally Controlled Cu-Ion Transport in Layered Ferroelectric CuInP2S6. | |
Molecular electronics | |
Nobler than the Noblest: Noncubic Gold Microcrystallites | |
The physics of SiO₂ and its interfaces : proceedings of the International Topical Conference on the Physics of Si0₂ and Its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York, March 22-24, 1978 | |
Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6 | |
Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology | |
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes | |
Scattering-theoretic techniques for defects in semiconductors ideal vacancies in Si, Ge, and GaAs | |
SiO2 and its interfaces : symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A. | |
Sizable Band Gap in Epitaxial Bilayer Graphene Induced by Silicene Intercalation | |
Theory of photoionization cross sections of impurities in semiconductors | |
Tunable quadruple-well ferroelectric van der Waals crystals | |
Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy |