Waser, Rainer, 1955-....
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Waser, Rainer
Rainer Waser
Waser, Reiner
Rainer, Martin
VIAF ID: 56762820 (Personal)
Permalink: http://viaf.org/viaf/56762820
Preferred Forms
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100 0 _
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Rainer Waser
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100 1 _ ‡a Rainer, Martin
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200 _ 1 ‡a Waser ‡b Rainer
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200 _ |
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Waser
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Rainer
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1955-....
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100 1 _ ‡a Waser, Rainer
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100 1 _ ‡a Waser, Rainer
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100 1 _
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Waser, Rainer
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100 1 _
‡a
Waser, Rainer
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100 1 _ ‡a Waser, Rainer
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100 1 _ ‡a Waser, Rainer
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100 1 _ ‡a Waser, Rainer
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100 1 0
‡a
Waser, Rainer
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100 1 _ ‡a Waser, Rainer ‡d (1955- )
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100 1 _ ‡a Waser, Rainer ‡d (1955- ).
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100 1 _
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Waser, Rainer
‡d
1955-
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100 1 _ ‡a Waser, Rainer, ‡d 1955-
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100 1 _
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Waser, Rainer,
‡d
1955-....
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100 1 _ ‡a Waser, Reiner
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100 1 _
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Waser, Reiner
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200 _ 1 ‡a Waser, ‡b Rainer
4xx's: Alternate Name Forms (11)
5xx's: Related Names (9)
- 551 _ _
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Frankfurt am Main
‡4
ortg
‡4
https://d-nb.info/standards/elementset/gnd#placeOfBirth
- 510 2 _
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NATO Advanced Research Workshop on Science and Technology of Electroceramic Thin Films (1994 : Maratea, Italy)
- 510 2 _
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NATO Advanced Research Workshop on Science and Technology of Electroceramic Thin Films (1994 : Villa del Mare, Italy)
- 510 2 _
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NATO advanced research workshop on science and technology of electroceramic thin films 1994
- 510 2 _
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North Atlantic Treaty Organization. Scientific Affairs Division
- 510 2 _
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RWTH Aachen
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Institut für Elektrische Maschinen
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affi
‡4
https://d-nb.info/standards/elementset/gnd#affiliation
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Affiliation
- 510 2 _
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RWTH Aachen
‡b
Institut für Werkstoffe der Elektrotechnik II
‡4
affi
‡4
https://d-nb.info/standards/elementset/gnd#affiliation
‡e
Affiliation
- 510 2 _
‡a
RWTH Aachen
‡b
Institut für Elektrische Maschinen
- 510 2 _
‡a
RWTH Aachen
‡b
Institut für Werkstoffe der Elektrotechnik II
Works
| Title | Sources |
|---|---|
| Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion |
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| Electronic conduction processes in VCM-type metal-oxide ReRAM cells |
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| Formation Sequence of Lead Platinum Interfacial Phases in Chemical Solution Deposition Derived Pb(Zr1−xTix)O3Thin Films |
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| Frontiers in Electronic Materials Correlation Effects, Spintronics, and Memristive Phenomena - Fundamentals and Ap plications |
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| Grundlegende Analyse der Schreib- und Leseoperationen in passiven Crossbar-Strukturen mit resistiv schaltenden Materialien |
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| Hafniumoxid-basierte memristive Bauelemente als funktionale Elemente neuromorpher Schaltungen |
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| A high throughput generative vector autoregression model for stochastic synapses |
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| Homogeneity and variation of donor doping in Verneuil-grown SrTiO3:Nb single crystals |
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| Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory |
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| influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films |
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| Interface-driven formation of a two-dimensional dodecagonal fullerene quasicrystal |
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| Intrinsic RESET Speed Limit of Valence Change Memories |
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| Introduction to new memory paradigms: memristive phenomena and neuromorphic applications |
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| Konstruktion vonHfO2-basierten graduellen resistiv schaltenden Bauelementen erhalten durch Atomlagenabscheidung von oxidischen Doppelschichten |
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| La0.6Sr0.4CoO3−δ Films Under Deoxygenation Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition |
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| Liquid Injection MOCVD of Dysprosium Scandate Films |
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| Magnetische Proximity-Effekte in Nanopartikel-Kompositsystemen und Makrokristallen |
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| Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1 |
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| Microstructure evolution of proton-conducting ceramic films fabricated by wet-chemical methods |
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| Modeling the oxygen transport at heterointerfaces for oxide-based electronics |
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| Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO3 |
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| Mononuclear precursor for MOCVD of HfO2 thin films |
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| Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices |
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| Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
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| Nanoelectronics and information technology : advanced electronic materials and novel devices |
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| Nanoerekutoronikusu. |
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| Nanospectroscopy of Infrared Phonon Resonance Enables Local Quantification of Electronic Properties in Doped SrTiO3 Ceramics |
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| Nanostrukturierte Si-Legierungen für Siliziumsolarzellen |
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| A new phase of the c(4 x 2) superstructure of alkanethiols grown by vapor phase deposition on gold |
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| numerisches Simulationsmodell für valenzwechselbasiertes resistives Schalten |
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| Observation of Vacancy Defect Migration in the Cation Sublattice of Complex Oxides byO18Tracer Experiments |
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| Optimization of powder and ceramic processing, electrical characterization and defect chemistry in the system YbxCa1-xMnO3 |
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| Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO3 |
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| Performance and degradation of BaCoO$_based Perovskite catalysts during oxygen evolution in alkaline water electrolysis |
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| Performance und Zersetzung von BaCoO$_Perowskit-Katalysatoren während der Sauerstoffentwicklung in der alkalischen Wasserelektrolyse |
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| Physical Origin of Threshold Switching in Amorphous Chromium-Doped V2O3 |
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| Physical origins and suppression of Ag dissolution in GeS |
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| Polar grain boundaries in undoped SrTiO3 ceramics |
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| Polar oxides : properties, characterization, and imaging |
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| Polymorphism in micro-, submicro-, and nanocrystalline NaNbO3 |
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| Pushing towards the digital storage limit |
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| Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes |
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| Rainer Waser doctor honoris causa Universitatis Silesiensis |
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| Realization of Minimum and Maximum Gate Function in Ta2O5- based Memristive Devices |
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| Rectangular (3 x 2 square root of 3) superlattice of a dodecanethiol self-assembled monolayer on Au(111) observed by ultra-high-vacuum scanning tunneling microscopy |
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| Redoxprozesse und ionischer Transport in resistiv schaltenden Metalloxiden |
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| Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices |
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| Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory |
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| Reliability aspects of binary vector-matrix-multiplications using ReRAM devices |
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| Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases. |
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| Resistiv schaltende Bauelemente auf Germaniumsulfidbasis |
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| Resistive switching from fundamentals of nanoionic redox processes to memristive device applications |
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| Resistive switching in optoelectronic III-V materials based on deep traps. |
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| Resistive switching in Pr$_conclusive model and switching kinetics |
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| Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy |
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| Science and technology of electroceramic thin films |
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| Sequence learning in a spiking neuronal network with memristive synapses |
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| SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems. |
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| Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices |
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| Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO3 |
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| Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices |
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| Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices |
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| Surface deformations as a necessary requirement for resistance switching at the surface of SrTiO3:N. |
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| Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 |
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| Synthese und resistive Schaltmechanismen von Mott-Isolatoren basierend auf undotieren und Cr-dotierten Vanadiumoxid Dünnschichten als Funktion der Nanostruktur und der Materialeigenschaften |
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| Theoretical and experimental investigation of electronic transport phenomena in oxide based resistive switches |
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| Topotactic Phase Transition Driving Memristive Behavior |
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| Transiente Schalt- und Relaxationseffekte in Phasenwechselnanostrukturen |
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| Transport limits in defect-engineered LaAlO3/SrTiO3 bilayers. |
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| Tuning the surface electronic structure of a Pt3Ti(111) electro catalyst |
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| Tunneling spectroscopic investigation of three-dimensional donor-acceptor molecules |
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| Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations |
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| Understanding the conductive channel evolution in Na:WO3−x-based planar devices |
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| Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals. |
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| Untersuchung von AlN/GaN Übergittern und ihrer Anwendungen in Bauelementen der Gruppe-III Nitride |
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| Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy |
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| Variability-aware compact modeling of valence-change-mechanism based devices for computation-in-memory |
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| Variable size and shape distribution of ferroelectric nanoislands by chemical mechanical polishing |
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| Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices |
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| Volatile HRS asymmetry and subloops in resistive switching oxides |
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| Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches. |
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| ナノエレクトロニクス. |
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