Shunri Oda
오다 슌리 1951-
小田, 俊理, 1951-
오다 슌리
VIAF ID: 255433079 (Personal)
Permalink: http://viaf.org/viaf/255433079
Preferred Forms
- 100 0 _ ‡a Shunri Oda
- 100 1 _ ‡a 小田, 俊理, ‡d 1951-
- 100 0 _ ‡a 오다 슌리
- 100 1 _ ‡a 오다 슌리 ‡d 1951-
4xx's: Alternate Name Forms (14)
Works
Title | Sources |
---|---|
Atlas of IC technologies. | |
Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films | |
Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots | |
Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts | |
Charge sensing of a Si triple quantum dot system using single electron transistors | |
Charge storage and electron/light emission properties of silicon nanocrystals | |
Computer simulation of amorphous-silicon charge-coupled devices | |
Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate | |
Controlled Ge nanowires growth on patterned Au catalyst substrate | |
Coupled quantum dots on SOI as highly integrated Si qubits | |
Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 10(19) cm(-3). | |
Denshi bussei zairyo no jiten. | |
Design of multiple layered a-Si:H(F)/a-SiGex:H(F) films for enhancement in photoresponse in the near-infrared spectrum | |
Design Optimization of NEMS Switches for Suspended-Gate Single-Electron Transistor Applications | |
Electrical properties of a CdTe/InSb hetero metal‐insulator‐semiconductor structure | |
Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate | |
Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot | |
A fault-tolerant addressable spin qubit in a natural silicon quantum dot. | |
A flexible and wearable terahertz scanner | |
Germanium Nanowires with 3-nm-Diameter Prepared by Low Temperature Vapour–Liquid–Solid Chemical Vapour Deposition | |
GHz photon-activated hopping between localized states in a silicon quantum dot | |
High-density assembly of nanocrystalline silicon quantum dots | |
High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors | |
Hopping conduction in size-controlled Si nanocrystals | |
Hydrogen radical assisted chemical vapor deposition of ZnSe | |
Impact of Key Circuit Parameters on Signal-to-Noise Ratio Characteristics for the Radio Frequency Single-Electron Transistors | |
Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6 | |
(Keynote) Devices Architectures and Technology for Quantum Computing | |
Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots | |
Microwave manipulation of electrons in silicon quantum dots | |
Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique | |
The nanostructuring of materials for device and sensor applications | |
A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures | |
Observation and coherent control of interface-induced electronic resonances in a field-effect transistor. | |
Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures | |
Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift | |
p-channel amorphous silicon TFTs with high hole mobility | |
Perpendicular magnetic field dependence of triangular triple silicon quantum dot system | |
Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs | |
Preparation and characterization of low-resistivity ZnS for blue LED's | |
Preparation of Y-doped SrCuO2 infinite layer films by MOCVD | |
Probing electron charging in nanocrystalline Si dots using Kelvin probe force microscopy | |
Properties of a-Si based alloys prepared from fluorides and hydrogen | |
Proposal of coplanar-type high-Tc superconducting field-effect devices | |
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9. | |
Room temperature single electron charging in single silicon nanochains | |
Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography | |
Selflimiting adsorption of precursors for chemical vapor deposition of oxide superconductors | |
Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing | |
Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K | |
Spin-related tunneling in lithographically-defined silicon quantum dots | |
Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double Single-Electron Transistor Readout | |
Superconductivity and surface morphology of YBCO thin films prepared by metalorganic chemical vapor deposition | |
Switching properties of electromechanically bistable and multistable bridges for nonvolatile memory applications | |
Tip-enhanced Raman mapping of a single Ge nanowire | |
Toward Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots | |
Transient response analysis of programming/readout characteristics for NEMS memory | |
Vapor-solid-solid radial growth of Ge nanowires | |
Vertical-coupled SiGe double quantum dots | |
Vertical-type amorphous-silicon MOSFET ICs | |
Visualization of Ultrafast Electron Dynamics Using Time-Resolved Photoemission Electron Microscopy | |
Zusetsu chō eruesuai kōgaku | |
図說超LSI工学 | |
電子物性・材料の事典 |