Colin Humphreys British physicist
Humphreys, C. J. (Colin J.)
Humphreys, Colin John, 1941-....
![Sudoc [ABES], France](/viaf/images/flags/SUDOC.png "Sudoc [ABES], France")
Humphreys, Colin J.
Humphreys, Colin J. 1941-
Humphreys, C. J.
Colin Humphreys
Humphreys, C. J. (Colin J.), 1941-
Humphreys, C. J. (Colin John), 1941-
Humphreys, Colin J. (Colin John), 1941-
VIAF ID: 80450952 (Personal)
Permalink: http://viaf.org/viaf/80450952
Preferred Forms
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Colin Humphreys
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Colin Humphreys
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British physicist
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Humphreys
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Colin J.
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100 1 _ ‡a Humphreys, C. J.
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Humphreys, C. J.
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(Colin J.)
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100 1 _ ‡a Humphreys, C. J. ‡q (Colin J.)
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100 1 _ ‡a Humphreys, C. J. ‡q (Colin J.)
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100 1 _ ‡a Humphreys, C. J. ‡q (Colin J.), ‡d 1941-
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100 1 _ ‡a Humphreys, C. J. ‡q (Colin John), ‡d 1941-
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100 1 _ ‡a Humphreys, Colin J.
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100 1 _
‡a
Humphreys, Colin J.
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100 1 _ ‡a Humphreys, Colin J. ‡d (1941- ).
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100 1 _
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Humphreys, Colin J.
‡d
1941-
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100 1 _ ‡a Humphreys, Colin J. ‡q (Colin John), ‡d 1941-
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100 1 _
‡a
Humphreys, Colin John,
‡d
1941-....
4xx's: Alternate Name Forms (31)
Works
| Title | Sources |
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| Accurate structure factor determination with electron diffraction |
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| Creation and evolution, 1985: |
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| Electron diffraction, 1927-1977 : invited and contributed papers from the International Conference on Electron Diffraction held in London, 19-21 September 1977 |
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| High voltage electron microscopy : proceedings of the Third International Conference |
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| The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method |
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| The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption |
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| The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem |
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| The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy |
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| Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose |
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| Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy |
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| Interfacial structure and chemistry of GaN on Ge |
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| Investigation of the GaN-on-GaAs interface for vertical power device applications |
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| letzten Tage Jesu und das Geheimnis des Abendmahls |
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| Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon |
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| Machine Learning Predicts Laboratory Earthquakes |
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| Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition |
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| The microstructure of non-polar a-plane |
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| Os milagres do Êxodo : descoberta de um cientista das extraordinárias causas naturais das histórias bíblicas |
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| Miracles of exodus |
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| Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images |
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| mystery of the last supper reconstructing the final days of Jesus |
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| Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors |
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| The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells |
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| nb2002031788 |
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| Non-linear excitation and correlation studies of single InGaN quantum dots |
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| Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE |
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| Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN |
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| Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning |
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| Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire |
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| The origin and reduction of dislocations in Gallium Nitride |
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| Origin of faceted surface hillocks on semi-polar |
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| Photoluminescence studies of cubic GaN epilayers |
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| Practical issues in carrier-contrast imaging of GaN structures |
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| Q-factor measurements on planar nitride cavities |
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| Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)] |
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| Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)] |
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| Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures |
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| The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials |
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| The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3 |
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| Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells |
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| Scalable semipolar gallium nitride templates for high-speed LEDs |
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| SCM and SIMS investigations of unintentional doping in III-nitrides |
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| Segregation of In to dislocations in InGaN. |
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| SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations |
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| Simulation of the quantum-confined stark effect in a single InGaN quantum dot |
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| Solar eclipse of 1207 BC helps to date pharaohs |
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| Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films |
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| Stebic Revisited |
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| Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN |
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| Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core–Shell Nanorods |
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| Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory |
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| Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges |
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| TEM Investigation of Point Defect Interactions in II-VI Compounds |
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| Temporal variation in photoluminescence from single InGaN quantum dots |
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| Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure |
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| Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells |
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| Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers |
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| Time-resolved dynamics in single InGaN quantum dots (Invited Paper) |
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| Toward defect-free semi-polar GaN templates on pre-structured sapphire |
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| Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE |
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| Towards a better understanding of trench defects in InGaN/GaN quantum wells |
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| Transfer Printed Multi-color Integrated Devices for Visible Light Communication Applications |
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| Turning Points in Solid-State, Materials and Surface Science : A Book in Celebration of the Life and Work of Sir John Meurig Thomas |
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| Und der Dornbusch brannte doch ein Naturwissenschaftler erklärt die Wunderberichte der Bibel |
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| Understanding materials, 2002: |
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| Unintentional doping in GaN assessed by scanning capacitance microscopy |
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| What is red? On the chromaticity of orange-red InGaN/GaN based LEDs |
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