Schäpers, Thomas, 1962-
Schäpers, Thomas.
Thomas Schäpers
VIAF ID: 56848266 ( Personal )
Permalink: http://viaf.org/viaf/56848266
Preferred Forms
- 200 _ | ‡a Schäpers ‡b Thomas
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- 100 1 _ ‡a Schäpers, Thomas ‡d 1962-
- 100 1 _ ‡a Schäpers, Thomas, ‡d 1962-
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- 100 1 _ ‡a Schäpers, Thomas, ‡d 1962-....
- 100 1 _ ‡a Schäpers, Thomas
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- 100 0 _ ‡a Thomas Schäpers
4xx's: Alternate Name Forms (10)
Works
Title | Sources |
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Ablenkung ballistischer Elektronen in AlGaAs,GaAs-Heterostrukturen mittels elektrischer und magnetischer Felder | |
Anomalous temperature dependence of multiple Andreev reflections in a topological insulator Josephson junction | |
Croissance et caractérisation de nanofils coeur/coquille semiconducteur/supraconducteur pour les technologies quantiques | |
Electron spins in reduced dimensions: ESR spectroscopy on semiconductor heterostructures and spin chain compounds | |
Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices | |
Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi2 Te3 nanoribbons | |
Growth and characterization of InAs nanowire-based Josephson junctions | |
Lifetimes of free valley states in monolayers of WSe$_2$, MoSe$_2$ and their heterostructures | |
Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout | |
Mid-infrared near-field investigation of resonances in doped semiconductors | |
Nahfeld-Untersuchungen von Resonanzen dotierter Halbleiter im mittleren infraroten Spektralbereich | |
Phase-coherent loops in selectively-grown topological insulator nanoribbons | |
Reappearance of first Shapiro step in narrow topological Josephson junctions | |
Structural, magnetic and electrical transport properties of GaN-based magnetic semiconductors and hybrid structures | |
Superconductor, semiconductor junctions | |
Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions | |
Towards semiconductor-superconductor hybrid quantum circuits Gatemon and Andreev qubits based on InAs/Al, InAs/Nb and GaAs/InSb core/shell nanowires |