Waser, Rainer, 1955-....
Waser, Rainer
Waser, Reiner
Rainer Waser
Rainer, Martin
VIAF ID: 56762820 ( Personal )
Permalink: http://viaf.org/viaf/56762820
Preferred Forms
- 100 0 _ ‡a Rainer Waser
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- 200 _ | ‡a Waser ‡b Rainer ‡f 1955-....
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- 100 1 _ ‡a Waser, Rainer
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- 100 1 0 ‡a Waser, Rainer
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- 100 1 _ ‡a Waser, Rainer
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- 100 1 _ ‡a Waser, Rainer ‡d 1955-
- 100 1 _ ‡a Waser, Rainer ‡d 1955-
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- 100 1 _ ‡a Waser, Rainer, ‡d 1955-....
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- 100 1 _ ‡a Waser, Reiner
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4xx's: Alternate Name Forms (11)
5xx's: Related Names (9)
- 551 _ _ ‡a Frankfurt am Main ‡4 ortg ‡4 https://d-nb.info/standards/elementset/gnd#placeOfBirth
- 510 2 _ ‡a NATO Advanced Research Workshop on Science and Technology of Electroceramic Thin Films (1994 : Maratea, Italy)
- 510 2 _ ‡a NATO Advanced Research Workshop on Science and Technology of Electroceramic Thin Films (1994 : Villa del Mare, Italy)
- 510 2 _ ‡a NATO advanced research workshop on science and technology of electroceramic thin films 1994
- 510 2 _ ‡a North Atlantic Treaty Organization. Scientific Affairs Division
- 510 2 _ ‡a RWTH Aachen ‡b Institut für Elektrische Maschinen ‡4 affi ‡4 https://d-nb.info/standards/elementset/gnd#affiliation ‡e Affiliation
- 510 2 _ ‡a RWTH Aachen ‡b Institut für Werkstoffe der Elektrotechnik II ‡4 affi ‡4 https://d-nb.info/standards/elementset/gnd#affiliation ‡e Affiliation
- 510 2 _ ‡a RWTH Aachen ‡b Institut für Elektrische Maschinen
- 510 2 _ ‡a RWTH Aachen ‡b Institut für Werkstoffe der Elektrotechnik II
Works
Title | Sources |
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Electronic conduction processes in VCM-type metal-oxide ReRAM cells | |
Frontiers in Electronic Materials Correlation Effects, Spintronics, and Memristive Phenomena - Fundamentals and Ap plications | |
Homogeneity and variation of donor doping in Verneuil-grown SrTiO3:Nb single crystals | |
Hydroxyl Defect Effect on Reoxidation of Sc-Doped (Ba,Ca)(Ti,Zr)O 3 Fired in Reducing Atmospheres | |
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory | |
In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches | |
In situ sputtern | |
influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films | |
Intrinsic RESET Speed Limit of Valence Change Memories | |
Investigation of AlN/GaN superlattices and their application to group III nitride devices | |
Kognitive Anwendungen in resistiven Speichern | |
Konstruktion vonHfO2-basierten graduellen resistiv schaltenden Bauelementen erhalten durch Atomlagenabscheidung von oxidischen Doppelschichten | |
La0.6Sr0.4CoO3−δ Films Under Deoxygenation Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition | |
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems | |
Magnetische Proximity-Effekte in Nanopartikel-Kompositsystemen und Makrokristallen | |
Memristive Phenomena - from fundamental physics to neuromorphic computing lecture notes of the 47th IFF Spring School 2016 | |
Methoden der Leitfähigkeitsuntersuchung mittels Rasterkraftmikroskop und deren Anwendung auf Barium Titanat Systeme | |
Microstructure evolution of proton-conducting ceramic films fabricated by wet-chemical methods | |
Modeling and simulation of valence-change based resistive switching | |
Modeling the oxygen transport at heterointerfaces for oxide-based electronics | |
Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices | |
Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic | |
Nachhaltigen Wandel gestalten Innovationsimpulse der RWTH | |
Nanoelectronics and information technology : advanced electronic materials and novel devices | |
Nanoerekutoronikusu. | |
Nanospectroscopy of Infrared Phonon Resonance Enables Local Quantification of Electronic Properties in Doped SrTiO3 Ceramics | |
Nanostructured Si-alloys for silicon solar cells | |
Nanostrukturierte Si-Legierungen für Siliziumsolarzellen | |
numerisches Simulationsmodell für valenzwechselbasiertes resistives Schalten | |
Optimization of powder and ceramic processing, electrical characterization and defect chemistry in the system YbxCa1-xMnO3 | |
Oxygen Diffusion in Platinum Electrodes A Molecular Dynamics Study of the Role of Extended Defects | |
Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO3 | |
Performance and degradation of BaCoO$_based Perovskite catalysts during oxygen evolution in alkaline water electrolysis | |
Performance und Zersetzung von BaCoO$_Perowskit-Katalysatoren während der Sauerstoffentwicklung in der alkalischen Wasserelektrolyse | |
Phase change superlattices and thin film effects MBE-growth and characterization | |
Polar oxides : properties, characterization, and imaging | |
Pr x Ba 1-x CoO 3 Oxide Electrodes for Oxygen Evolution Reaction in Alkaline Solutions by Chemical Solution Deposition | |
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes | |
Rainer Waser doctor honoris causa Universitatis Silesiensis | |
Realization of Minimum and Maximum Gate Function in Ta2O5- based Memristive Devices | |
Redoxprozesse und ionischer Transport in resistiv schaltenden Metalloxiden | |
Reliability aspects in resistively switching valence change memory cells | |
Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices | |
Resistiv schaltende Bauelemente auf Germaniumsulfidbasis | |
Resistive switching from fundamentals of nanoionic redox processes to memristive device applications | |
Resistive switching in Pr$_conclusive model and switching kinetics | |
Resistives Schalten in Pr$_Schlüssiges Modell und Schaltkinetik | |
Reversibility limitations of metal exsolution reactions in niobium and nickel co-doped strontium titanate | |
role of interface and exchange processes in forming and switching of $ZrO_2}$ ZrO2 based ReRAM devices | |
role of materials design in oxide-based resistive memories | |
Science and technology of electroceramic thin films | |
Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices | |
Standards for the Characterization of Endurance in Resistive Switching Devices | |
Studien zur Bildung und Beweglichkeit von Oberflächenkomplexen an der Silber/Elektrolyt-Grenzfläche | |
Study on growth of epitaxial single domain tin-telluride and epitaxial antimony on silicon and sputter-grown bismuth-tin-telluride nanowhiskers | |
Switching kinetics of valence change memory devices on a sub-100 ps timescale | |
Synthese und resistive Schaltmechanismen von Mott-Isolatoren basierend auf undotieren und Cr-dotierten Vanadiumoxid Dünnschichten als Funktion der Nanostruktur und der Materialeigenschaften | |
System model of neuromorphic sequence learning on a memristive crossbar array | |
Theoretical and experimental investigation of electronic transport phenomena in oxide based resistive switches | |
Theory and experimental verification of configurable computing with stochastic memristors | |
Topotactic Phase Transition Driving Memristive Behavior | |
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices | |
Transient processes in resistive switching memory devices at ultimate time scale down to sub-nanosecond range | |
Transiente Prozesse in resistiv schaltenden Speicherelementen auf ultimativer Zeitskala bis zum Sub-Nanosekunden-Bereich | |
Transiente Schalt- und Relaxationseffekte in Phasenwechselnanostrukturen | |
Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis | |
Tuning the surface electronic structure of a Pt3Ti(111) electro catalyst | |
Tunneling spectroscopic investigation of three-dimensional donor-acceptor molecules | |
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations | |
Understanding the conductive channel evolution in Na:WO3−x-based planar devices | |
Untersuchung von AlN/GaN Übergittern und ihrer Anwendungen in Bauelementen der Gruppe-III Nitride | |
Unveiling the relaxation dynamics of $Ag/HfO_based diffusive memristors for use in neuromorphic computing | |
Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns | |
Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy | |
Variability-aware compact modeling of valence-change-mechanism based devices for computation-in-memory | |
Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices | |
Wachstumsuntersuchung von epitaktischem Zinntellurid und epitaktischem Antimon auf Silizium und gesputterten Bismut-Zinn-Tellurid Nanowhiskern | |
Zuverlässigkeitsaspekte resistiv schaltender Valenzwechsel-Speicherzellen | |
ナノエレクトロニクス. |