Sébenne, Claude 1934-
Sébenne, Claude
Sébenne, C. A. (Claude A.)
Sébenne, C. A.
VIAF ID: 44424552 (Personal)
Permalink: http://viaf.org/viaf/44424552
Preferred Forms
- 200 _ | ‡a Sébenne ‡b Claude
- 100 1 0 ‡a Sébenne, C. A. ‡q (Claude A.)
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- 100 1 _ ‡a Sébenne, Claude, ‡d 1934-....
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- 100 1 _ ‡a Sébenne, C. A. ‡q (Claude A.)
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- 100 1 _ ‡a Sébenne, Claude ‡d 1934-
4xx's: Alternate Name Forms (7)
Works
Title | Sources |
---|---|
CONTRIBUTION A L'ETUDE DE L'INTERACTION DE L'HYDROGENE ATOMIQUE AVEC LES FACES (110) ET (100) DE GAAS ET INP | |
CONTRIBUTION A L'ETUDE DE L'INTERCALATION DU LITHIUM DANS MOO 3-NH 2O ET SES COMPOSES DERIVES | |
Contribution à l'étude des effets de surface dans le sulfure de cadmium | |
CONTRIBUTION TO THE STUDY OF HETEROJUNCTIONS PROPERTIES FORMED BY A LAYERED COMPOUND (INSE OR GASE)EPITAXES ON TO A SI(111). | |
Contribution to the study of the electronic structure of pure amorphous silicon and hydrogenated amorphous silicon. | |
EFFET OF VACUUM ANNEALINGS ON THE ELECTRONIC PROPERTIES OF CLEAN SI(111) AND SI(100) SURFACES. | |
Elementary excitations in solids : a special volume in honour of professor Minko Balkanski on the occasion of his 65th birthday | |
Etude de la croissance épitaxiale par jets moléculaires des lamellaires (GaSe, InSe) sur silicium et de ZnSe sur lamellaire | |
ETUDE DE LA FACE (100) DU SILICIUM | |
Étude des supraconducteurs YBa2Cu3O7-δ à haute température critique par la spectroscopie Raman | |
ETUDE PAR PHOTOEMISSION DES SURFACES (111) ET (110) IMPARFAITES DE SILICIUM | |
formation of semiconductor interfaces : Proceedings of the International Conference on the Formation of Semiconductor Interfaces : Marseille, Luminy, France, 10-14 June 1985 | |
HETEROSTRUCTURES DE GASE ET INSE LAMELLAIRES SUR GAAS(001) ET SUR SI(111) : PREPARATION ET PROPRIETES D'INTERFACE | |
III-V Fluoride Semiconductors : application to the passivation of GaAs and InP. | |
Instrumental development for scanning tunneling microscopy. | |
INTERACTION, A TEMPERATURE AMBIANTE, DE L'HYDROGENE ATOMIQUE ET DE L'AMMONIAC AVEC LA SURFACE CLIVEE PROPRE DU PHOSPHURE D'INDIUM | |
INTERACTION DE NH#3 AVEC LES SURFACES PROPRES DE SILICIUM | |
MOLECULAR BEAM EPITAXY OF LAYERED COMPOUNDS (GASE, INSE) ON SILICON AND ZNSE ON A LAYERED MATERIA. | |
Ondes et phénomènes vibratoires | |
Physique... | |
Raman spectroscopy study of the high-Tc YBa2Cu3O7-δ superconductors. | |
SCANNING TUNNELING MICROSCOPY AND ATOMIC FORCE MICROSCOPY CHARACTERISATION IN AIR OF IMPLANTED (001) SILICON: INFLUENCE OF DOPING AGENTS AND DOPING RATE ON SURFACE PROFILE AND CONDUCTIVITY. | |
STUDIES OF THE LITHIUM INSERTION ON THE ELECTRONIC AND VIBRATIONAL PROPERTIES OF LAYERED SEMICONDUCTING COMPOUNDS BY RAMAN AND INFRARED SPECTROSCOPIES. | |
Study of electronic and structural properties at the interfaces gase/si(111) and inse/si(111) by angular resolved ultraviolet photoelectron spectroscopy. | |
Study of the production of low energy hydrogen ions and their interaction with clean cleaved semiconductor surfaces (GaAs, InP). | |
STUDY OF THE SILICON (100) SURFACE. | |
Transport et magnétotransport dans le monoséléniure d'indium lamellaire |