Fjeldly, Tor A., 1943-
Fjeldly, Tor A.
Fjeldly, Tor Alexander.
Tor A. Fjeldly profesor elektrotechniky a odborník v oblasti fyziky pevných látek, polovodičů a simulace obvodů
VIAF ID: 42079077 ( Personal )
Permalink: http://viaf.org/viaf/42079077
Preferred Forms
- 200 _ | ‡a Fjeldly ‡b Tor A. ‡f 1943-....
- 100 1 _ ‡a Fjeldly, Tor A.
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- 100 1 _ ‡a Fjeldly, Tor A.
- 100 1 _ ‡a Fjeldly, Tor A.
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- 100 1 _ ‡a Fjeldly, Tor A. ‡d 1943-
- 100 1 _ ‡a Fjeldly, Tor A. ‡d 1943-
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- 100 0 _ ‡a Tor A. Fjeldly ‡c profesor elektrotechniky a odborník v oblasti fyziky pevných látek, polovodičů a simulace obvodů
4xx's: Alternate Name Forms (5)
Works
Title | Sources |
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Advances in surface acoustic wave technology, systems and applications | |
AIM-spice : a new circuit simulator running under the Microsoft Windows operating system with improved device models | |
AIM-spice FET device models : new device modeling approach in VLSI era | |
A charge conserving capacitance model for GaAs MESFETs for CAD applications | |
CMOS RF modeling, characterization and applications | |
Compact modeling of deep submicron HFETs | |
Complementary heterostructure field effect transistor models for mixed mode applications | |
Computer aided design for Si and GaAs integrated circuits | |
Conducting laboratory experiments over the Internet | |
Deformation properties of solution heat treated AlZnMg extruded profiles | |
Device and circuit modeling of GaAs-based transistors | |
Device Modeling for Analog and RF CMOS Circuit Design | |
Device modeling issues in deep-submicron MOSFETs : continued chip scaling ultimately hinges on understanding how transistors operate in the deep submicron regime | |
Diffusion in lanthanum fluoride studied with 19F relaxation | |
Diffusion in silver fluoride / A. M. Raaen and I. Svare, T. A. Fjeldly | |
Electrodes solides indicatrices d'ions | |
Extrinsic versus intrinsic models for FETs | |
FET modeling for analog and digital applications | |
Fiberoptisk temperatursensor / T. A. Fjeldly, E. Myhre, A. Hordvik | |
Fluoride electrodes with reversible solid-state contacts / T. A. Fjeldly and K. Nagy | |
Frontiers in electronics advanced modeling in nanoscale electron devices | |
GaAs MESFET model for a wide range of temperatures | |
Gassdeteksjonssystem basert på IR-fibre | |
Halvleder heterostrukturer : eksempler på III-V halvlederkomponenter basert på MBE-teknologi | |
HEMT modelling | |
Hybrid integrated differential ion-selective sensors | |
The interaction of heat pulses and of ultrasonic waves with stress-split acceptor states in semiconductors | |
Introduction to device modeling and circuit simulation, c1997: | |
Kontrollsensorer i biler / Tor A. Fjeldly | |
Lab on the Web : running real electronics experiments via the Internet | |
Lumped modeling of a novel RF MEMS double-disk resonator system | |
Materialdata og flytekriterium for anisotrop AA7108.70 legering = Material data and yield criterion for anistotropic AA7108.70 alloy | |
Metal semiconductor field effect transistors | |
Model calculations of GaAs MESFETs. 1 : Low-frequency properties | |
Modeling of current degradation in hot-electron damaged LDD NMOSFETs | |
Modeling of small-signal parameters in GaAs MESFETs with a stationary space-charge domain | |
Modelling of quantum ballistic cylindrical nanowire MOSFETs in the subthreshold regime | |
Monte Carlo simulation of electron transport in mercury cadmium telluride | |
The Monte Carlo technique as a testing ground for new design concepts | |
Negative differential resistance in GaAs MESFETs | |
Next Generation Lab : a solution for remote characterization of analog integrated circuits | |
Physics based modelling of short-channel nanowire MOSFET | |
Precise modeling framework for short-channel double-gate and gate-all-around MOSFETs | |
Reply to Comments by J. M. Pimbley | |
A secure approach to distributed internet-enabled metrology | |
Self-consistent model for fully depleted SOI/MOSFETs including self-heating | |
Self-consistent theory including nonstationary phenomena for carrier transport in the AlGaAs/GaAs high electron mobility transistor | |
Silicon and beyond, c2000: | |
Simulation and modeling of compound semiconductor devices | |
Solid state differential potentiometric sensors | |
Speed and convergence properties of improved MOSFET models included in the circuit simulator AIM-spice | |
Stability of IR fluoride glasses under exposure to high humidity and to aqueous solutions : a preliminary study | |
Stability of IR transparent fluoride glasses in humid air studied by Auger electron spectroscopy | |
Teknologi for heteroovergang felt-effekt transistor (HEMT) | |
Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFET's | |
Transmission and reflection times for scattering of wave packets off tunneling barriers | |
Tuning of resist slope with hardbaking parameters and release methods of extra hard photoresist for RF MEMS switches | |
Unified CAD models for HFETs and MESFETs | |
Unified capacitance modelling of MOSFETs | |
Unified physical I-V model of fully depleted SOI/MOSFETs for analog/digital circuit simulation | |
Unified substrate current model for MOSFETs | |
Warm and hot hole drift velocity in GaAs studied by Monte Carlo simulation |