Bechstedt, Friedhelm.
Friedhelm Bechstedt condensed matter physicist at University of Jena and ETSF
Bechstedt, Friedhelm 1949-
VIAF ID: 24688680 (Personal)
Permalink: http://viaf.org/viaf/24688680
Preferred Forms
- 200 _ | ‡a Bechstedt ‡b Friedhelm
- 100 1 _ ‡a Bechstedt, Friedhelm
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- 100 1 _ ‡a Bechstedt, Friedhelm
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- 100 1 _ ‡a Bechstedt, Friedhelm
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- 100 1 _ ‡a Bechstedt, Friedhelm
- 100 1 _ ‡a Bechstedt, Friedhelm ‡d 1949-
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- 100 0 _ ‡a Friedhelm Bechstedt ‡c condensed matter physicist at University of Jena and ETSF
4xx's: Alternate Name Forms (5)
5xx's: Related Names (4)
- 510 2 _ ‡a Friedrich-Schiller-Universität Jena ‡b Institut für Festkörpertheorie und -optik ‡4 affi ‡4 https://d-nb.info/standards/elementset/gnd#affiliation ‡e Affiliation
- 510 2 _ ‡a Institut für Festkörpertheorie und -optik
- 510 2 _ ‡a Izdatel'stvo "Mir" (Moskwa)
- 510 2 _ ‡a Springer-Verlag (Berlin)
Works
Title | Sources |
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Ab-initiotheory of semiconductor band structures: New developments and progress | |
Absolute surface energies of group-IV semiconductors: Dependence on orientation and reconstruction | |
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap | |
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3 | |
The Bethe–Salpeter equation: a first-principles approach for calculating surface optical spectra | |
Characteristic energies and shifts in optical spectra of colloidal IV-VI semiconductor nanocrystals | |
Charge transport in guanine-based materials | |
Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates | |
DFT-1/2 method applied to 2D topological insulators: fluorinated and hydrogenated group-IV honeycomb systems | |
Direct-bandgap emission from hexagonal Ge and SiGe alloys | |
Effects of strain on the valence band structure and exciton-polariton energies in ZnO | |
Electronic and optical properties of topological semimetal Cd3As2. | |
Electronic band gap of Si/SiO2 quantum wells: Comparison ofab initiocalculations and photoluminescence measurements | |
Electronic structure of In₂O₃ from resonant x-ray emission spectroscopy | |
Enhanced Optical Absorption Due to Symmetry Breaking in TiO2(1–x)S2x Alloys | |
Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row andd-electron elements | |
Flexible 2D Crystals of Polycyclic Aromatics Stabilized by Static Distortion Waves | |
Geometry and electronic band structure of surfaces: the case of Ge(111):Sn and C(111) | |
Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials | |
Guanine crystals: a first principles study | |
Hund's Rule-Driven Dzyaloshinskii-Moriya Interaction at 3d-5d Interfaces. | |
Influence of on-site Coulomb interaction U on properties of MnO(001)2 × 1 and NiO(001)2 × 1 surfaces | |
Linear optical properties in the projector-augmented wave methodology | |
Many-Body Approach to Electronic Excitations : Concepts and Applications | |
Massive Dirac quasiparticles in the optical absorbance of graphene, silicene, germanene, and tinene | |
Metal-to-Insulator Transition in Au Chains on Si(111)-5×2-Au by Band Filling: Infrared Plasmonic Signal and Ab Initio Band Structure Calculation. | |
Metallic Properties of the Si(111) - 5 × 2 - Au Surface from Infrared Plasmon Polaritons and Ab Initio Theory | |
Nonlinear transport in superlattices: Bloch oscillations and Zener breakdown | |
Optical absorption and emission of α-Sn nanocrystals from first principles | |
Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires | |
Optical spectra of Si nanocrystallites: Bethe-Salpeter approach versus time-dependent density-functional theory | |
Origin of Dirac-cone-like features in silicon structures on Ag(111) and Ag(110) | |
Parameterfreie Untersuchung der elektronischen Struktur von graphitartigem Kohlenstoff | |
Parameterfreie Untersuchungen an MnO in verschiedenen Kristallstrukturen und unter Berücksichtigung nichtlokaler Austauscheffekte | |
Phonons at III–V (110) surfaces | |
Poverhnosti i granicy razdela poluprovodnikov | |
Principles of surface physics, c2003: | |
Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications | |
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires. | |
Quasiparticle band structure based on a generalized Kohn-Sham scheme | |
Screening models and simplified GW approaches: Si & GaN as test cases | |
Semiconductor surfaces and interfaces, 1988: | |
Structure, energetics, and electronic states of III-V compound polytypes | |
Theoretical optical spectroscopy of complex systems | |
Theoretical study of the chemical gap tuning in silicon nanowires | |
Tin dioxide from first principles: Quasiparticle electronic states and optical properties | |
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires | |
Validity of Weyl fermion picture for transition metals monopnictides TaAs, TaP, NbAs, and NbP from ab initio studies. | |
Vielteilchenwechselwirkungen von Elektronen in einem Hubbard-Cluster |