Rafik Addou
Addou, Rafik, 1981-....
VIAF ID: 218534310 (Personal)
Permalink: http://viaf.org/viaf/218534310
Preferred Forms
- 100 1 _ ‡a Addou, Rafik ‡d 1981-...
- 100 1 _ ‡a Addou, Rafik, ‡d 1981-....
- 100 0 _ ‡a Rafik Addou
4xx's: Alternate Name Forms (2)
Works
Title | Sources |
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Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study | |
Atomically thin heterostructures based on single-layer tungsten diselenide and graphene. | |
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures | |
Combined Surface Science and DFT Study of the Adsorption of Dinitrotoluene (2,4-DNT) on Rutile TiO2(110): Molecular Scale Insight into Sensing of Explosives | |
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure. | |
Defect-dominated doping and contact resistance in MoS2 | |
Defects and domain boundaries in self-assembled terephthalic acid (TPA) monolayers on CVD-grown graphene on Pt(111) | |
Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing. | |
Defects in Two-Dimensional Materials | |
Direct observation of interlayer hybridization and Dirac relativistic carriers in graphene/MoS₂ van der Waals heterostructures. | |
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts | |
Fermi Level Manipulation through Native Doping in the Topological Insulator BiSe | |
Growth of a two-dimensional dielectric monolayer on quasi-freestanding graphene. | |
HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy | |
High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth | |
High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃ | |
Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments | |
Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers. | |
Influence of hydroxyls on Pd atom mobility and clustering on rutile TiO(2)(011)-2 × 1 | |
Interface properties of CVD grown graphene transferred onto MoS2(0001). | |
Manganese Doping of Monolayer MoS2: The Substrate Is Critical. | |
Near-unity photoluminescence quantum yield in MoS₂. | |
New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2. | |
Partially Fluorinated Graphene: Structural and Electrical Characterization. | |
Pseudomorphy, surface alloys and the role of elementary clusters on the domain orientations in the Cu/Al13Co4(100) system | |
Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. | |
Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides. | |
Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy | |
Seeding atomic layer deposition of alumina on graphene with yttria. | |
Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability. | |
Surface chemistry of 2-propanol and O2 mixtures on SnO2(110) studied with ambient-pressure x-ray photoelectron spectroscopy | |
Surface Defects on Natural MoS2 | |
Surfaces d'alliages métalliques complexes : structure, propriétés et nanostructuration | |
Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures. |