Bescond, Marc, 1978-....
VIAF ID: 216216739 ( Personal )
Permalink: http://viaf.org/viaf/216216739
Preferred Forms
- 100 1 _ ‡a Bescond, Marc ‡d 1978-...
- 100 1 _ ‡a Bescond, Marc, ‡d 1978-....
Works
Title | Sources |
---|---|
Advanced numerical modeling applied to current prediction in ultimate CMOS devices | |
Compréhension de l'apport des contraintes mécaniques sur les performances électriques des transistors avancés sur SOI | |
Electron-phonon interactions within the quantum formalism of Nonequilibrium Green’s Function applied to the simulation of p-type MOSFETs. | |
Interaction électron-phonon dans le cadre du formalisme des fonctions de Green hors-équilibre : application à la modélisation de transistors MOS de type p | |
Modeling and simulation of quantum transport in nanoscale MOSFETs. | |
Modélisation et simulation du transport quantique dans les transistors MOS nanométriques | |
Modélisations numériques avancées pour la prédiction des courants dans les dispositifs CMOS ultimes. | |
Original quantum treatment of inelastic interactions for modeling of atomistic transport in three-dimensional nanostructures. | |
Quantum transport modeling of doublegate transistors : influence of strain, material and phonon scattering. | |
Single electron and single dopant control in silicon transistors. | |
Theoretical study of mobility degradation in FDSOI architectures for advanced technological nodes (< 20 nm). | |
Theoretical study of new concepts of graphene based transistors. | |
Understanding of mechanical stress contribution on the electrical performances of advanced transistors on SOI. |