Medjdoub, Farid, 1977-....
Farid Medjdoub researcher
VIAF ID: 216173486 ( Personal )
Permalink: http://viaf.org/viaf/216173486
Preferred Forms
- 100 0 _ ‡a Farid Medjdoub ‡c researcher
- 100 1 _ ‡a Medjdoub, Farid ‡d 1977-
- 100 1 _ ‡a Medjdoub, Farid ‡d 1977-..
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- 100 1 _ ‡a Medjdoub, Farid, ‡d 1977-....
4xx's: Alternate Name Forms (1)
Works
Title | Sources |
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Analyse d’alliages ternaire et quaternaire (Al, Ga, In)N pour application aux transistors à haute mobilité électronique par microscopie électronique en transmission. | |
Application of PICTS to the study of high resistivity materials with very high trap densities for radio-frequency applications. | |
Characterization and fabrication of InGaN solar cells | |
Circuit design and characterization of devices based on AlN/GaN double heterostructure for millimeter-wave power applications. | |
Conception et réalisation de transistors à effet de champ à hétérojonction sur substrat InP pour amplification de puissance en bande W | |
Design and fabrication of GaN-based field effect power transistors up to W-band. | |
Development and fabrication of GaN-based devices for kilovolt power converter applications. | |
Diamond Schottky diodes improvement to pave the way to high power electronic application. | |
Diamond unipolar devices : towards impact ionization coefficients extraction | |
Diodes Schottky en diamant un nouveau pas vers les applications pour l'électronique de puissance | |
Dopage de couches de GaN sur substrat silicium par implantation ionique | |
Étude de deux nouvelle approches pour la réalisation de cellule solaire à base d'InGaN | |
Etude de la Fiabilité des Transistors HEMTs AIGaN/GaN de puissance en condition opérationnelle | |
Gallium nitride (GaN) physics, devices, and technology | |
Innovative substrates for GaN-based power devices. | |
Investigation of new approaches for the realization of InGaN based solar cells. | |
Investigation of ternary ΑlΙnΝ and quaternary ΑlGaΙnΝ alloys for high electron mobility transistors by transmission electron microscopy | |
Ion implantation doping of GaN-on-silicon layers. | |
New electronic components based on AlN material for future power applications. | |
New HEMT Type Sensors for In-situ Bio‐Geochemical Analysis | |
Nouveaux capteurs de type HEMT pour analyse bio-géochimique in-situ. | |
Optimization of GaN technology for Ku-band power amplification specific to airborne sensor applications. | |
Reliability study of power AlGaN/GaN HEMT transistors under operating conditions. | |
Robustness assessment of normally-off GaN HEMT technology with fluorine ions implantation co-integrated with normally-on GaN HEMT technology. | |
Substrats innovants pour des composants de puissance à base de GaN |