Baranov, Alexeï, 19..-...., chercheur
![Sudoc [ABES], France](/viaf/images/flags/SUDOC.png "Sudoc [ABES], France")
Alexei Baranov Forscher
VIAF ID: 202009051 (Personal)
Permalink: http://viaf.org/viaf/202009051
Preferred Forms
4xx's: Alternate Name Forms (4)
Works
| Title | Sources |
|---|---|
| Antimonide single-emission laser emitting at 2.5 micrometer for gas sensing. |
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| Conception and fabrication of InAs-based hot electron transistor |
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| Creation of the cavity of the tunable whispering gallery modes mid infrared laser |
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| Design, fabrication and characterization of InSb avalanche photodiode. |
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| Design, fabrication and investigation of Interband Cascade structures for mid-IR VCSELs |
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| Diodes lasers DFB à couplage par l'indice émettant entre 2 µm et 3,3 µm sur substrat GaSb |
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| Dispositifs polaritoniques intersous-bandes dans la gamme spectrale du moyen-infrarouge. |
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| Experimental study of transport in InAs Quantum Hot Electron Transistor |
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| Exploration de la dynamique non-linéaire et de la compression d'amplitude des lasers à ilots quantiques. |
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| Giant intersubband polariton splitting in InAs/AlSb microcavities |
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| Half-disk laser: insight into the internal mode structure of laser resonators |
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| High-density InSb-based quantum dots emitting in the mid-infrared |
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| High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 [micro sign]m |
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| Improvement of Sb-based multiquantum well lasers by Coulomb enhancement |
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| Index coupled distributed feedback GaSb based laser diode in the 2µm to 3.3µm range. |
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| Lasers à cascade quantique InAs/AlSb : amélioration des performances et fonctionnement monofréquence |
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| Lasers monofréquences à base de GaSb émettant à 2,6 µm pour l'analyse de gaz |
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| MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3μm |
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| MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones |
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| Mid-Infrared Intersubband Polaritonic Devices |
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| Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells |
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| Negative Differential Conductivity in InAs/AlSb Superlattices |
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| New scanning probe microscopy near-field imaging method for laser radiation intensity mapping |
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| Nouveaux dispositifs à cascade quantique dans l'infrarouge moyen pour des applications dans l'optique espace libre, la sécurité des données et la photonique des micro-ondes. |
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| Novel Developments in Photothermal Interferometry and Long-Wavelength Quantum Cascade Lasers for Gas Sensing |
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| Novel mid-infrared quantum cascade devices for applications in free-space optics, data security and microwave photonics |
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| Off-beam QEPAS sensor using an 11-μm DFB-QCL with an optimized acoustic resonator |
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| Optical power detector with broad spectral coverage, high detectivity, and large dynamic range |
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| Photoacoustic characteristics of carbon-based infrared absorbers |
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| Powerful mid-infrared light emitting diodes for pollution monitoring |
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| Progress in Interband Cascade Lasers: From Edge Emitting Lasers to VCSELs |
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| Propriétés dynamiques et non linéaires des lasers à boîtes quantiques pour circuits intégrés photoniques sur silicium. |
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| Propriétés physiques d'hétérostructures à base de HgCdTe : vers l'émission et la détection Terahertz. |
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| Quantum cascade lasers grown on silicon |
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| Quantum-dot lasers on silicon : nonlinear properties, dynamics, and applications |
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| Réalisation par MBE et caractérisation physique de diodes lasers à puits quantiques GaInAsSb/AlGaAsSb émettant vers 2.3 [micro]m |
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| Room temperature continuous wave operation of InAs/AlSb‐based quantum cascade laser at λ ∼11 µm |
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| Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm |
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| Sb-based monolithic VCSEL operating near 2.2 [micro sign]m at room temperature |
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| Semiconductor lasers |
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| Shallow acceptor states in undoped GaSb |
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| Short wavelength intersubband emission from InAs/AlSb quantum cascade structures |
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| Staggered-lineup heterojunctions in the system of GaSbInAs |
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| Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications |
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| Structure and Optical Properties of InGaAsBi with up to 7% Bismuth |
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| Sub-ppb detection of benzene using cantilever-enhanced photoacoustic spectroscopy with a long-wavelength infrared quantum cascade laser |
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| Terahertz spectroscopy of HgCdTe - and InAs/GaSb - based heterostructures. |
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