Bullis, W. Murray, 1930-....
Bullis, W. Murray
Bullis, W.M. 1930-
Bullis, W.M. (W. Murray), 1930-
VIAF ID: 14886315 ( Personal )
Permalink: http://viaf.org/viaf/14886315
Preferred Forms
- 200 _ | ‡a Bullis ‡b W. Murray ‡f 1930-....
- 100 1 _ ‡a Bullis, W. Murray
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- 100 1 _ ‡a Bullis, W. Murray
- 100 1 _ ‡a Bullis, W. Murray ‡d 1930-
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- 100 1 0 ‡a Bullis, W. Murray, ‡d 1930-
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- 100 1 _ ‡a Bullis, W. Murray, ‡d 1930-....
- 100 1 _ ‡a Bullis, W.M. ‡d 1930-
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4xx's: Alternate Name Forms (4)
Works
Title | Sources |
---|---|
EFFECT OF RAPID THERMAL ANNEALING WHEN USED FOR ANNIHILATION OF THERMAL DONORS IN SILICON ON SUBSEQUENT OXYGEN PRECIPITATION | |
Evolution of silicon materials characterization : lessons learned for improved manufacturing | |
A FORTRAN program for calculating the electrical parameters of extrinsic silicon | |
Measurement of carrier lifetime in semiconductors; an annotated bibliography covering the period 1949-1967 | |
Methods of measurements for semiconductor materials, process control and devices | |
Metrology for submicrometer devices and circuits | |
Progress report, October 1, 1976 to March 31, 1977 | |
Quarterly report, July 1 to September 30, 1973 | |
Semiconductor characterization : present status and future needs | |
Semiconductor measurement technology : progress report, January 1 to June 30, 1975 | |
Use of a time-shared computer system to control a Hall effect experiment | |
VLSI science and technology/1985 : proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology |